RN1705,LF
- Mfr.Part #
- RN1705,LF
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package/Case
- -
- Datasheet
- Download
- Description
- NPNX2 BRT Q1BSR2.2KOHM Q1BER47KO
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- Current - Collector (Ic) (Max) :
- 100mA
- Current - Collector Cutoff (Max) :
- 500nA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 10mA, 5V
- Frequency - Transition :
- 250MHz
- Mounting Type :
- Surface Mount
- Package / Case :
- 5-TSSOP, SC-70-5, SOT-353
- Part Status :
- Active
- Power - Max :
- 200mW
- Resistor - Base (R1) :
- 2.2kOhms
- Resistor - Emitter Base (R2) :
- 47kOhms
- Supplier Device Package :
- USV
- Transistor Type :
- 2 NPN - Pre-Biased (Dual)
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 250µA, 5mA
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Datasheets
- RN1705,LF
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RN1703,LF | Toshiba Electronic Devices and Storage Corporation | 6,000 | NPNX2 BRT Q1BSR22KOHM Q1BER22KOH |
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RN1706,LF | Toshiba Electronic Devices and Storage Corporation | 6,000 | NPNX2 BRT Q1BSR4.7KOHM Q1BER47KO |
RN1706JE(TE85L,F) | Toshiba Electronic Devices and Storage Corporation | 5 | TRANS 2NPN PREBIAS 0.1W ESV |
RN1707,LF | Toshiba Electronic Devices and Storage Corporation | 9,000 | NPNX2 BRT Q1BSR10KOHM Q1BER47KOH |
RN1707JE(TE85L,F) | Toshiba Electronic Devices and Storage Corporation | 3,471 | NPN X 2 BRT, Q1BSR=10KΩ, Q1BER=4 |
RN1708,LF | Toshiba Electronic Devices and Storage Corporation | 5,853 | NPNX2 BRT Q1BSR22KOHM Q1BER47KOH |
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