RN2706,LF
- Mfr.Part #
- RN2706,LF
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package/Case
- -
- Datasheet
- Download
- Description
- PNPX2 BRT Q1BSR4.7KOHM Q1BER47KO
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- Current - Collector (Ic) (Max) :
- 100mA
- Current - Collector Cutoff (Max) :
- 500nA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 10mA, 5V
- Frequency - Transition :
- 200MHz
- Mounting Type :
- Surface Mount
- Package / Case :
- 5-TSSOP, SC-70-5, SOT-353
- Part Status :
- Active
- Power - Max :
- 200mW
- Resistor - Base (R1) :
- 4.7kOhms
- Resistor - Emitter Base (R2) :
- 47kOhms
- Supplier Device Package :
- USV
- Transistor Type :
- 2 PNP - Pre-Biased (Dual)
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 250µA, 5mA
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Datasheets
- RN2706,LF
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RN2703JE(TE85L,F) | Toshiba Electronic Devices and Storage Corporation | 3 | TRANS 2PNP PREBIAS 0.1W ESV |
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RN2705JE(TE85L,F) | Toshiba Electronic Devices and Storage Corporation | 75 | TRANS 2PNP PREBIAS 0.1W ESV |
RN2706JE(TE85L,F) | Toshiba Electronic Devices and Storage Corporation | 3,999 | TRANS 2PNP PREBIAS 0.1W ESV |
RN2707,LF | Toshiba Electronic Devices and Storage Corporation | 5,975 | PNPX2 BRT Q1BSR10KOHM Q1BER47KOH |
RN2707JE(TE85L,F) | Toshiba Electronic Devices and Storage Corporation | 1,845 | TRANS 2PNP PREBIAS 0.1W ESV |
RN2708,LF | Toshiba Electronic Devices and Storage Corporation | 6,000 | PNPX2 BRT Q1BSR10KOHM Q1BER47KOH |
RN2708JE(TE85L,F) | Toshiba Electronic Devices and Storage Corporation | 2,990 | TRANS 2PNP PREBIAS 0.1W ESV |